SSM6K31FE 2003-12-19 1 silicon p channel mos type ( -mos ? ) SSM6K31FE ? high speed switching ? dc-dc converter ? small package ? low r ds (on) : r on = 240 m ? (typ) (@v gs = 10 v) : r on = 400 m ? (typ) (@v gs = 4 v) maximum ratings (ta = 25c) mosfet ? characteristics symbol rating unit drain-source voltage v ds 20 v gate-source voltage v gss 20 v dc i d 1.2 drain current pulse i dp 2.4 a drain power dissipation p d (note 1) 500 mw channel temperature t ch 150 c storage temperature t stg ? 55~150 c note 1:mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) marking equivalent circuit (top view) handling precaution when handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against elec trostatic discharge. oper ators should wear anti-static clothing and use containers and other objects that are made of anti-static materials. the channel-to-ambient thermal resistance r th (ch-a) and the drain power dissipation p d vary according to the board material, board area, board thickness and pad area. when using this device, please take heat dissipation fully into account. ? unit: mm ? 1,2,5,6 ? : drain 3 ? ? ? : gate 4 : source jedec D jeita D toshiba 2-2n1a weight: 3 mg (typ.) 6 b 4 1 2 3 5 4 1 2 3 6 5 tentative
SSM6K31FE 2003-12-19 2 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 ? ? 1 a drain-source breakdown voltage v (br) dss i d = 1 ma, v gs = 0 20 ? ? v i dss v ds = 20 v, v gs = 0 ? ? 1 a drain cut-off current v th v ds = 5 v, i d = 0.1 ma 1.1 ? 2.3 v gate threshold voltage ? y fs ? v ds = 5 v, i d = 0.6 a (note 2) 0.58 ? ? s i d = 0.6 a, v gs = 10 v (note 2) ? 240 320 forward transfer admittance drain-source on resistance r ds (on) i d = 0.6 a, v gs = 4 v (note 2) ? 400 540 m ? c iss v ds = 10 v, v gs = 0, f = 1 mhz ? 36 ? pf input capacitance c rss v ds = 10 v, v gs = 0, f = 1 mhz ? 10 ? pf reverse transfer capacitance c oss v ds = 10 v, v gs = 0, f = 1 mhz ? 30 ? pf turn-on time t on ? ? ? switching time turn-off time t off v dd = 10 v, i d = 0.6 a, v gs = 0~4 v, r g = 10 ? ? ? ? ns note 2:pulse measurement switching time test circuit (a) test circuit (b) v in precaution v th can be expressed as voltage between gate and source when low operat ing current value is i d = 100 a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consid eration for using the device. v gs recommended voltage of 4.0 v or hi gher to turn on this product. (c) v out v dd = 10 v r g = 10 ? duty < = 1% v in : t r , t f < 5 ns common source ta = 25c v dd out in 4 v 0 10 s r g t f t on 90% 10% 4 v 0 v 10% 90% t off t r v dd v ds ( on )
SSM6K31FE 2003-12-19 3 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inhe rent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within s pecified operating ranges as set forth in the most recent toshiba products specific ations. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semicon ductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are inte nded for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunc tion or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control in struments, airplane or spaceship instruments, transportation instruments, traffic signa l instruments, combusti on control instruments, medical instruments, all types of safety devices, etc .. unintended usage of toshiba products listed in this document shall be made at th e customer?s own risk. ? toshiba products should not be embedded to the down stream products which ar e prohibited to be produced and sold, under any law and regulations. 030619ea a restrictions on product use
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